Information card for entry 7235296

Structure parameters

• Formula: C28 H26 N4 S4
• Calculated formula: C28 H26 N4 S4
• Title of publication: High-performance n-channel field effect transistors based on solution-processed dicyanomethylene-substituted tetrathienoquinoid
• Authors of publication: Wu, Qinghe; Qiao, Xiaolan; Huang, Qiuliu; Li, Jie; Xiong, Yu; Gao, Xike; Li, Hongxiang
• Journal of publication: RSC Adv.
• Year of publication: 2014
• Journal volume: 4
• Journal issue: 33
• Pages of publication: 16939
• a: 5.27 ± 0.0008 Å
• b: 7.28 ± 0.0011 Å
• c: 18.461 ± 0.003 Å
• α: 92.723 ± 0.002°
• β: 96.98 ± 0.003°
• γ: 110.788 ± 0.003°
• Cell volume: 654.11 ± 0.18 ų
• Cell temperature: 133 ± 2 K
• Ambient diffraction temperature: 133 ± 2 K
• Number of distinct elements: 4
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0381
• Residual factor for significantly intense reflections: 0.0298
• Weighted residual factors for significantly intense reflections: 0.0746
• Weighted residual factors for all reflections included in the refinement: 0.0797
• Goodness-of-fit parameter for all reflections included in the refinement: 1.035
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No