Information card for entry 7236449

Structure parameters

• Common name: C10-TBBT-V
• Formula: C36 H48 S3
• Calculated formula: C36 H48 S3
• Title of publication: High performance solution-crystallized thin-film transistors based on V-shaped thieno[3,2-f:4,5-f′]bis[1]benzothiophene semiconductors
• Authors of publication: Mitsui, Chikahiko; Tsuyama, Hiroaki; Shikata, Ryoji; Murata, Yoshinori; Kuniyasu, Hiroyuki; Yamagishi, Masakazu; Ishii, Hiroyuki; Yamamoto, Akito; Hirose, Yuri; Yano, Masafumi; Takehara, Tsunayoshi; Suzuki, Takeyuki; Sato, Hiroyasu; Yamano, Akihito; Fukuzaki, Eiji; Watanabe, Tetsuya; Usami, Yoshihisa; Takeya, Jun; Okamoto, Toshihiro
• Journal of publication: Journal of Materials Chemistry C
• Year of publication: 2017
• Journal volume: 5
• Journal issue: 8
• Pages of publication: 1903
• a: 7.6675 ± 0.0011 Å
• b: 6.1022 ± 0.0008 Å
• c: 69.473 ± 0.01 Å
• α: 90°
• β: 92.129 ± 0.008°
• γ: 90°
• Cell volume: 3248.3 ± 0.8 ų
• Cell temperature: 293 K
• Ambient diffraction temperature: 293 K
• Number of distinct elements: 3
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for significantly intense reflections: 0.1019
• Weighted residual factors for all reflections included in the refinement: 0.2571
• Goodness-of-fit parameter for all reflections included in the refinement: 0.986
• Diffraction radiation wavelength: 1.54187 Å
• Diffraction radiation type: CuKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No