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Information card for entry 7237580
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| Coordinates | 7237580.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Chemical name | Sn(NCS)2 |
|---|---|
| Formula | C2 N2 S2 Sn |
| Calculated formula | C2 N2 S2 Sn |
| Title of publication | Tin(ii) thiocyanate Sn(NCS)2 ‒ a wide band gap coordination polymer semiconductor with a 2D structure |
| Authors of publication | Wechwithayakhlung, Chayanit; Packwood, Daniel M.; Chaopaknam, Jidapa; Worakajit, Pimpisut; Ittisanronnachai, Somlak; Chanlek, Narong; Promarak, Vinich; Kongpatpanich, Kanokwan; Harding, David J.; Pattanasattayavong, Pichaya |
| Journal of publication | Journal of Materials Chemistry C |
| Year of publication | 2019 |
| Journal volume | 7 |
| Journal issue | 12 |
| Pages of publication | 3452 |
| a | 4.8792 ± 0.0004 Å |
| b | 5.6694 ± 0.0004 Å |
| c | 10.1845 ± 0.0008 Å |
| α | 100.369 ± 0.002° |
| β | 97.316 ± 0.002° |
| γ | 93.225 ± 0.002° |
| Cell volume | 273.96 ± 0.04 Å3 |
| Cell temperature | 143 ± 2 K |
| Ambient diffraction temperature | 143 ± 2 K |
| Number of distinct elements | 4 |
| Space group number | 2 |
| Hermann-Mauguin space group symbol | P -1 |
| Hall space group symbol | -P 1 |
| Residual factor for all reflections | 0.0152 |
| Residual factor for significantly intense reflections | 0.0143 |
| Weighted residual factors for significantly intense reflections | 0.0396 |
| Weighted residual factors for all reflections included in the refinement | 0.04 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.141 |
| Diffraction radiation probe | x-ray |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
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The link is: https://www.crystallography.net/7237580.html
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