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Information card for entry 7248723
Preview
| Coordinates | 7248723.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | C15 H16 O3 S |
|---|---|
| Calculated formula | C15 H16 O3 S |
| SMILES | S(=O)(=O)(OCCc1ccccc1)c1ccc(cc1)C |
| Title of publication | Crystal engineering for intramolecular π–π stacking: effect of substitution of electron-donating and electron-withdrawing groups on the molecular geometry in conformationally flexible Sulfoesters and sulfonamides |
| Authors of publication | Shaikh, Samir R.; Gawade, Rupesh L.; Dabke, Niteen B.; Dash, Soumya R.; Vanka, Kumar; Gonnade, Rajesh G. |
| Journal of publication | CrystEngComm |
| Year of publication | 2024 |
| Journal volume | 26 |
| Journal issue | 26 |
| Pages of publication | 3557 - 3573 |
| a | 7.3793 ± 0.0006 Å |
| b | 8.1389 ± 0.0007 Å |
| c | 24.315 ± 0.002 Å |
| α | 85.636 ± 0.005° |
| β | 89.814 ± 0.005° |
| γ | 74.498 ± 0.004° |
| Cell volume | 1402.9 ± 0.2 Å3 |
| Cell temperature | 296 ± 2 K |
| Ambient diffraction temperature | 296 ± 2 K |
| Number of distinct elements | 4 |
| Space group number | 2 |
| Hermann-Mauguin space group symbol | P -1 |
| Hall space group symbol | -P 1 |
| Residual factor for all reflections | 0.1373 |
| Residual factor for significantly intense reflections | 0.1224 |
| Weighted residual factors for significantly intense reflections | 0.3 |
| Weighted residual factors for all reflections included in the refinement | 0.3076 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.103 |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
For the version history of this entry, please navigate to main COD server.
The link is: https://www.crystallography.net/7248723.html
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Users of the data should acknowledge the original authors of the
structural data.