Crystallography Open Database

Information card for entry 7249717

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Coordinates	7249717.cif
Original paper (by DOI)	HTML

Structure parameters

Formula	Ga4 O6 Te0
Calculated formula	Ga4 O6
Title of publication	Top-seeded solution growth and characterization of β-Ga2O3
Authors of publication	Song, Yufei; Guo, Xiaojie; Mu, Wenxiang; Tao, Xutang; Gao, Zeliang
Journal of publication	CrystEngComm
Year of publication	2025
Journal volume	27
Journal issue	6
Pages of publication	814 - 819
a	12.247 ± 0.001 Å
b	3.044 ± 0.0002 Å
c	5.8136 ± 0.0005 Å
α	90°
β	103.866 ± 0.004°
γ	90°
Cell volume	210.41 ± 0.03 Å³
Cell temperature	273 ± 2 K
Ambient diffraction temperature	273 ± 2 K
Number of distinct elements	3
Space group number	12
Hermann-Mauguin space group symbol	C 1 2/m 1
Hall space group symbol	-C 2y
Residual factor for all reflections	0.0282
Residual factor for significantly intense reflections	0.0221
Weighted residual factors for significantly intense reflections	0.0513
Weighted residual factors for all reflections included in the refinement	0.0542
Goodness-of-fit parameter for all reflections included in the refinement	1.042
Diffraction radiation wavelength	0.71073 Å
Diffraction radiation type	MoKα
Has coordinates	Yes
Has disorder	No
Has F_obs	No

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