Information card for entry 7249841

Structure parameters

• Formula: C24 H16 Cu2 I3 N4 S4
• Calculated formula: C24 H16 Cu2 I3 N4 S4
• Title of publication: Ternary resistive switching memory of copper–organic complex/iodocuprate/sulfur hybrid enabled by π–π interactions and S8 relaxation
• Authors of publication: Li, Huifang; Gao, Yiqun; Lin, Xi; Li, Ke; Lin, Xiaoli; Li, Haohong; Zheng, Huidong
• Journal of publication: CrystEngComm
• Year of publication: 2025
• Journal volume: 27
• Journal issue: 10
• Pages of publication: 1439 - 1445
• a: 23.119 ± 0.002 Å
• b: 15.1711 ± 0.0012 Å
• c: 16.9715 ± 0.0015 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 5952.6 ± 0.9 ų
• Cell temperature: 296.15 K
• Ambient diffraction temperature: 296.15 K
• Number of distinct elements: 6
• Space group number: 56
• Hermann-Mauguin space group symbol: P c c n
• Hall space group symbol: -P 2ab 2ac
• Residual factor for all reflections: 0.0681
• Residual factor for significantly intense reflections: 0.0443
• Weighted residual factors for significantly intense reflections: 0.1565
• Weighted residual factors for all reflections included in the refinement: 0.198
• Goodness-of-fit parameter for all reflections included in the refinement: 0.677
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No