Crystallography Open Database

Information card for entry 7703260

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Coordinates	7703260.cif
Original paper (by DOI)	HTML

Structure parameters

Formula	C52 H48 P2 Si2
Calculated formula	C52 H48 P2 Si2
Title of publication	Proximity enforced oxidative addition of a strong unpolar σ-Si-Si bond at rhodium(i).
Authors of publication	Holsten, Sebastian; Hupf, Emanuel; Lork, Enno; Mebs, Stefan; Beckmann, Jens
Journal of publication	Dalton transactions (Cambridge, England : 2003)
Year of publication	2020
Journal volume	49
Journal issue	6
Pages of publication	1731 - 1735
a	17.918 ± 0.005 Å
b	13.341 ± 0.005 Å
c	19.445 ± 0.005 Å
α	90°
β	117.054 ± 0.005°
γ	90°
Cell volume	4140 ± 2 Å³
Cell temperature	100 K
Ambient diffraction temperature	100 K
Number of distinct elements	4
Space group number	14
Hermann-Mauguin space group symbol	P 1 21/c 1
Hall space group symbol	-P 2ybc
Residual factor for all reflections	0.068
Residual factor for significantly intense reflections	0.0444
Weighted residual factors for significantly intense reflections	0.1058
Weighted residual factors for all reflections included in the refinement	0.1149
Goodness-of-fit parameter for all reflections included in the refinement	1.037
Diffraction radiation wavelength	0.71073 Å
Diffraction radiation type	MoKα
Has coordinates	Yes
Has disorder	No
Has F_obs	No

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