Information card for entry 7709746

Structure parameters

• Common name: CsCuS4
• Formula: Cs Cu S4
• Calculated formula: Cs Cu S4
• Title of publication: Photocurrent, Humidity Sensitive and Proton Conductive Properties of a New Sulfide Semiconductor CsCuS4
• Authors of publication: Yan, Qiu-Nan; Liu, Bin-Wen; Jiang, Xiao-Ming; Zhao, Jin-Xu; Pei, Shao-Min; Chen, Wen-Fa; Guo, Guo-Cong
• Journal of publication: Dalton Transactions
• Year of publication: 2022
• a: 5.4472 ± 0.0007 Å
• b: 7.2597 ± 0.0006 Å
• c: 9.1804 ± 0.0013 Å
• α: 105.097 ± 0.01°
• β: 96.953 ± 0.011°
• γ: 110.347 ± 0.01°
• Cell volume: 319.53 ± 0.08 ų
• Cell temperature: 293 ± 2 K
• Ambient diffraction temperature: 293 ± 2 K
• Number of distinct elements: 3
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0612
• Residual factor for significantly intense reflections: 0.0568
• Weighted residual factors for significantly intense reflections: 0.1856
• Weighted residual factors for all reflections included in the refinement: 0.1883
• Goodness-of-fit parameter for all reflections included in the refinement: 1.096
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No