Information card for entry 7711466

Structure parameters

• Formula: C20 H48 N4 Pb2 Si2
• Calculated formula: C20 H48 N4 Pb2 Si2
• Title of publication: Atomic layer deposition of PbCl₂, PbBr₂ and mixed lead halide (Cl, Br, I) PbX_<i>n</i>Y_2-<i>n</i> thin films.
• Authors of publication: Popov, Georgi; Bačić, Goran; Van Dijck, Charlotte; Junkers, Laura S.; Weiß, Alexander; Mattinen, Miika; Vihervaara, Anton; Chundak, Mykhailo; Jalkanen, Pasi; Mizohata, Kenichiro; Leskelä, Markku; Masuda, Jason D.; Barry, Seán T; Ritala, Mikko; Kemell, Marianna
• Journal of publication: Dalton transactions (Cambridge, England : 2003)
• Year of publication: 2022
• Journal volume: 51
• Journal issue: 39
• Pages of publication: 15142 - 15157
• a: 10.967 ± 0.003 Å
• b: 13.051 ± 0.004 Å
• c: 19.827 ± 0.005 Å
• α: 90°
• β: 98.094 ± 0.003°
• γ: 90°
• Cell volume: 2809.6 ± 1.4 ų
• Cell temperature: 125 ± 2 K
• Ambient diffraction temperature: 125.07 K
• Number of distinct elements: 5
• Space group number: 15
• Hermann-Mauguin space group symbol: C 1 2/c 1
• Hall space group symbol: -C 2yc
• Residual factor for all reflections: 0.0326
• Residual factor for significantly intense reflections: 0.0231
• Weighted residual factors for significantly intense reflections: 0.0417
• Weighted residual factors for all reflections included in the refinement: 0.0446
• Goodness-of-fit parameter for all reflections included in the refinement: 1.005
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No