Information card for entry 7712750
| Chemical name |
Y6Pt13Ga4 |
| Formula |
Ga4 Pt13 Y6 |
| Calculated formula |
Ga4 Pt13 Y6 |
| Title of publication |
Electronic and structural properties of Y6Pt13X4, site occupancy variants of the Ba6Na16N subnitride (X = Al, Ga) |
| Authors of publication |
Salamakha, Leonid; Sologub, Oksana; Stöger, Berthold; Michor, Herwig; Bauer, Ernst; Rogl, Peter Franz; Mudry, Stepan |
| Journal of publication |
Dalton Transactions |
| Year of publication |
2023 |
| a |
9.4465 ± 0.001 Å |
| b |
9.4465 ± 0.001 Å |
| c |
9.4465 ± 0.001 Å |
| α |
90° |
| β |
90° |
| γ |
90° |
| Cell volume |
842.97 ± 0.15 Å3 |
| Cell temperature |
293 ± 2 K |
| Ambient diffraction temperature |
293 ± 2 K |
| Number of distinct elements |
3 |
| Space group number |
229 |
| Hermann-Mauguin space group symbol |
I m -3 m |
| Hall space group symbol |
-I 4 2 3 |
| Residual factor for all reflections |
0.0281 |
| Residual factor for significantly intense reflections |
0.0191 |
| Weighted residual factors for significantly intense reflections |
0.0339 |
| Weighted residual factors for all reflections included in the refinement |
0.0353 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.052 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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https://www.crystallography.net/7712750.html
