Information card for entry 7712771

Structure parameters

• Formula: C54 H83 Al Cl2 N4 Si2
• Calculated formula: C54 H83 Al Cl2 N4 Si2
• Title of publication: One Silicon Atom of Bis(silylene) Functions as a Selective Lewis Base under Adduct Formation with a Lewis Acid
• Authors of publication: Roesky, Herbert W.; Ding, Yi; Nazish, Mohd; Ruth, Paul Niklas; Herbst-Irmer, Regine; Stalke, Dietmar
• Journal of publication: Dalton Transactions
• Year of publication: 2023
• a: 13.685 ± 0.002 Å
• b: 14.216 ± 0.002 Å
• c: 16.579 ± 0.003 Å
• α: 81.82 ± 0.03°
• β: 68.84 ± 0.02°
• γ: 64.63 ± 0.02°
• Cell volume: 2717.5 ± 0.9 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 6
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.04
• Residual factor for significantly intense reflections: 0.0312
• Weighted residual factors for significantly intense reflections: 0.073
• Weighted residual factors for all reflections included in the refinement: 0.0776
• Goodness-of-fit parameter for all reflections included in the refinement: 1.035
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No