Information card for entry 7713197
| Formula |
Cs3 F6 Ga |
| Calculated formula |
Cs3 F6 Ga |
| Title of publication |
Polymorphism in A3MF6 (A = Rb, Cs; M = Al, Ga) Grown using Mixed Halide Fluxes |
| Authors of publication |
Morrison, Gregory; Masachchi, Lakshani W.; Tisdale, Hunter B.; Chang, Tieyan; Jones, Virginia G.; Zamorano, K. Pilar; Breton, Logan S.; Smith, Mark D.; Chen, Yu-Sheng; Zur Loye, Hans-Conrad |
| Journal of publication |
Dalton Transactions |
| Year of publication |
2023 |
| a |
11.396 ± 0.006 Å |
| b |
19.76 ± 0.011 Å |
| c |
11.453 ± 0.006 Å |
| α |
90° |
| β |
109.72 ± 0.02° |
| γ |
90° |
| Cell volume |
2428 ± 2 Å3 |
| Cell temperature |
301 ± 2 K |
| Ambient diffraction temperature |
301 ± 2 K |
| Number of distinct elements |
3 |
| Space group number |
12 |
| Hermann-Mauguin space group symbol |
C 1 2/m 1 |
| Hall space group symbol |
-C 2y |
| Residual factor for all reflections |
0.0337 |
| Residual factor for significantly intense reflections |
0.0278 |
| Weighted residual factors for significantly intense reflections |
0.0629 |
| Weighted residual factors for all reflections included in the refinement |
0.0675 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.154 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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https://www.crystallography.net/7713197.html
