Information card for entry 7713199
Formula |
Cs3 F6 Ga |
Calculated formula |
Cs3 F6.001 Ga |
Title of publication |
Polymorphism in A3MF6 (A = Rb, Cs; M = Al, Ga) Grown using Mixed Halide Fluxes |
Authors of publication |
Morrison, Gregory; Masachchi, Lakshani W.; Tisdale, Hunter B.; Chang, Tieyan; Jones, Virginia G.; Zamorano, K. Pilar; Breton, Logan S.; Smith, Mark D.; Chen, Yu-Sheng; Zur Loye, Hans-Conrad |
Journal of publication |
Dalton Transactions |
Year of publication |
2023 |
a |
11.3996 ± 0.0003 Å |
b |
19.7132 ± 0.0004 Å |
c |
11.4551 ± 0.0004 Å |
α |
90° |
β |
109.7 ± 0.001° |
γ |
90° |
Cell volume |
2423.55 ± 0.12 Å3 |
Cell temperature |
300 ± 2 K |
Ambient diffraction temperature |
299.94 K |
Number of distinct elements |
3 |
Space group number |
12 |
Hermann-Mauguin space group symbol |
C 1 2/m 1 |
Hall space group symbol |
-C 2y |
Residual factor for all reflections |
0.0307 |
Residual factor for significantly intense reflections |
0.0281 |
Weighted residual factors for significantly intense reflections |
0.0685 |
Weighted residual factors for all reflections included in the refinement |
0.0717 |
Goodness-of-fit parameter for all reflections included in the refinement |
1.16 |
Diffraction radiation wavelength |
0.71073 Å |
Diffraction radiation type |
MoKα |
Has coordinates |
Yes |
Has disorder |
No |
Has Fobs |
No |
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https://www.crystallography.net/7713199.html