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Information card for entry 7714165
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Coordinates | 7714165.cif |
---|---|
Original paper (by DOI) | HTML |
Common name | Sn(tbtp)2 |
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Formula | C18 H34 N4 Sn |
Calculated formula | C18 H34 N4 Sn |
Title of publication | Evaluation of tin nitride (Sn<sub>3</sub>N<sub>4</sub>) <i>via</i> atomic layer deposition using novel volatile Sn precursors. |
Authors of publication | Park, Hyeonbin; Choi, Heenang; Shin, Sunyoung; Park, Bo Keun; Kang, Kibum; Ryu, Ji Yeon; Eom, Taeyong; Chung, Taek-Mo |
Journal of publication | Dalton transactions (Cambridge, England : 2003) |
Year of publication | 2023 |
a | 12.1302 ± 0.0004 Å |
b | 10.2568 ± 0.0004 Å |
c | 16.2262 ± 0.0005 Å |
α | 90° |
β | 102.831 ± 0.001° |
γ | 90° |
Cell volume | 1968.4 ± 0.12 Å3 |
Cell temperature | 100 ± 1 K |
Ambient diffraction temperature | 100 ± 1 K |
Number of distinct elements | 4 |
Space group number | 14 |
Hermann-Mauguin space group symbol | P 1 21/n 1 |
Hall space group symbol | -P 2yn |
Residual factor for all reflections | 0.0287 |
Residual factor for significantly intense reflections | 0.0257 |
Weighted residual factors for significantly intense reflections | 0.0619 |
Weighted residual factors for all reflections included in the refinement | 0.0636 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.068 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
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The link is: https://www.crystallography.net/7714165.html
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