Information card for entry 7715581

Structure parameters

• Formula: C34 H58 B Ge P Si2
• Calculated formula: C34 H58 B Ge P Si2
• SMILES: [Ge]1([P](c2c(cccc2)[B]1(C1CCCCC1)C1CCCCC1)(C(C)C)C(C)C)(C#C[Si](C)(C)C)C#C[Si](C)(C)C
• Title of publication: Frustrated Lewis pair adducts of alkynyl-capped tetrelenes.
• Authors of publication: Muralidharan, Abhishek V.; Frenette, Brandon L.; Wicke, Julius; Omaña, Alvaro A; Ferguson, Michael J.; Rivard, Eric
• Journal of publication: Dalton transactions (Cambridge, England : 2003)
• Year of publication: 2024
• Journal volume: 53
• Journal issue: 16
• Pages of publication: 7206 - 7212
• a: 11.9583 ± 0.0015 Å
• b: 20.414 ± 0.003 Å
• c: 16.094 ± 0.002 Å
• α: 90°
• β: 107.665 ± 0.002°
• γ: 90°
• Cell volume: 3743.6 ± 0.9 ų
• Cell temperature: 193.15 K
• Ambient diffraction temperature: 193.15 K
• Number of distinct elements: 6
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.0773
• Residual factor for significantly intense reflections: 0.0446
• Weighted residual factors for significantly intense reflections: 0.0961
• Weighted residual factors for all reflections included in the refinement: 0.1117
• Goodness-of-fit parameter for all reflections included in the refinement: 1.022
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No