Information card for entry 7715980
| Formula |
C34 H32 N2 Si2 |
| Calculated formula |
C34 H32 N2 Si2 |
| Title of publication |
Borylation and rearrangement reactions of azasilaanthracenes to afford B,N-doped nanographenes |
| Authors of publication |
Zender, Elena; Valverde, Danillo; Neubaur, Robert; Karger, Sebastian; Virovets, Alexander; Bolte, Michael; Lerner, Hans-Wolfram; Olivier, Yoann; Wagner, Matthias |
| Journal of publication |
Dalton Transactions |
| Year of publication |
2024 |
| a |
33.9 ± 0.003 Å |
| b |
12.1623 ± 0.0007 Å |
| c |
15.9963 ± 0.0011 Å |
| α |
90° |
| β |
117.866 ± 0.008° |
| γ |
90° |
| Cell volume |
5830.5 ± 0.9 Å3 |
| Cell temperature |
238 ± 2 K |
| Ambient diffraction temperature |
238 ± 2 K |
| Number of distinct elements |
4 |
| Space group number |
15 |
| Hermann-Mauguin space group symbol |
C 1 2/c 1 |
| Hall space group symbol |
-C 2yc |
| Residual factor for all reflections |
0.0796 |
| Residual factor for significantly intense reflections |
0.0537 |
| Weighted residual factors for significantly intense reflections |
0.1321 |
| Weighted residual factors for all reflections included in the refinement |
0.1486 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.031 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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https://www.crystallography.net/7715980.html
