Information card for entry 7716229

Structure parameters

• Formula: C25 H50 Ge N2 S2 Si4
• Calculated formula: C25 H50 Ge N2 S2 Si4
• Title of publication: Activation of carbon disulfide by a hypersilyl germylene.
• Authors of publication: Ajithkumar, V. S.; Khilari, Nripen; Ghanwat, Pratiksha B.; Venugopal, Geethu; Koley, Debasis; Sen, Sakya S.
• Journal of publication: Dalton transactions (Cambridge, England : 2003)
• Year of publication: 2024
• Journal volume: 53
• Journal issue: 26
• Pages of publication: 10814 - 10818
• a: 9.8098 ± 0.0014 Å
• b: 23.143 ± 0.004 Å
• c: 24.199 ± 0.003 Å
• α: 87.922 ± 0.005°
• β: 79.937 ± 0.004°
• γ: 79.857 ± 0.005°
• Cell volume: 5324.7 ± 1.4 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 6
• Space group number: 1
• Hermann-Mauguin space group symbol: P 1
• Hall space group symbol: P 1
• Residual factor for all reflections: 0.1044
• Residual factor for significantly intense reflections: 0.0837
• Weighted residual factors for significantly intense reflections: 0.2113
• Weighted residual factors for all reflections included in the refinement: 0.2283
• Goodness-of-fit parameter for all reflections included in the refinement: 1.053
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No