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Information card for entry 8101683
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Coordinates | 8101683.cif |
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Chemical name | tris(triphenylphosphine)bis(phenylselenolato)disilver(I) |
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Formula | C66 H55 Ag2 P3 Se2 |
Calculated formula | C66 H55 Ag2 P3 Se2 |
SMILES | [Ag]1([Se](c2ccccc2)[Ag]([Se]1c1ccccc1)[P](c1ccccc1)(c1ccccc1)c1ccccc1)([P](c1ccccc1)(c1ccccc1)c1ccccc1)[P](c1ccccc1)(c1ccccc1)c1ccccc1 |
Title of publication | Crystal structure of tris(triphenylphosphine)bis(μ-phenylselenolato) disilver(I), Ag~2~[P(C~6~H~5~)~3~]~3~(C~6~H~5~Se)~2~ |
Authors of publication | R.-F. Wang; W.-G. Zhang; J. Fan; S.-L. Wang |
Journal of publication | Zeitschrift für Kristallographie - New Crystal Structures |
Year of publication | 2005 |
Journal volume | 220 |
Journal issue | 1 |
Pages of publication | 58 - 60 |
a | 11.0749 ± 0.0006 Å |
b | 13.4572 ± 0.0007 Å |
c | 20.501 ± 0.0011 Å |
α | 80.666 ± 0.001° |
β | 86.561 ± 0.001° |
γ | 72.516 ± 0.001° |
Cell volume | 2875.5 ± 0.3 Å3 |
Cell temperature | 294 ± 2 K |
Ambient diffraction temperature | 294 ± 2 K |
Number of distinct elements | 5 |
Space group number | 2 |
Hermann-Mauguin space group symbol | P -1 |
Hall space group symbol | -P 1 |
Residual factor for all reflections | 0.0604 |
Residual factor for significantly intense reflections | 0.0385 |
Weighted residual factors for significantly intense reflections | 0.0784 |
Weighted residual factors for all reflections included in the refinement | 0.0896 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.036 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
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