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Information card for entry 8101890
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Coordinates | 8101890.cif |
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External links | ChemSpider |
Chemical name | 1,1,4,4-tetramethyl-2,2,3,3-tetraphenyl-tetrasilane |
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Formula | C28 H34 Si4 |
Calculated formula | C28 H34 Si4 |
SMILES | [SiH]([Si]([Si]([SiH](C)C)(c1ccccc1)c1ccccc1)(c1ccccc1)c1ccccc1)(C)C |
Title of publication | Crystal structure of 1,1,4,4-tetramethyl-2,2,3,3-tetraphenyl-tetrasilane, [(CH~3~)~2~(H)Si(C~6~H~5~)~2~Si]~2~ |
Authors of publication | Harloff, J.; Reinke, H.; Köckerling, M.; Popowski, E. |
Journal of publication | Zeitschrift für Kristallographie - New Crystal Structures |
Year of publication | 2005 |
Journal volume | 220 |
Journal issue | 4 |
Pages of publication | 627 - 628 |
a | 10.149 ± 0.002 Å |
b | 10.712 ± 0.002 Å |
c | 15.148 ± 0.003 Å |
α | 85.51 ± 0.01° |
β | 88.99 ± 0.02° |
γ | 62.45 ± 0.01° |
Cell volume | 1455.3 ± 0.5 Å3 |
Cell temperature | 293 ± 2 K |
Ambient diffraction temperature | 293 ± 2 K |
Number of distinct elements | 3 |
Space group number | 2 |
Hermann-Mauguin space group symbol | P -1 |
Hall space group symbol | -P 1 |
Residual factor for all reflections | 0.0664 |
Residual factor for significantly intense reflections | 0.0487 |
Weighted residual factors for significantly intense reflections | 0.127 |
Weighted residual factors for all reflections included in the refinement | 0.1397 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.044 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
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