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Information card for entry 8102104
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Coordinates | 8102104.cif |
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Chemical name | N-(2-tert-butyl-5-methyl-4H-1,3-dioxin-4-yl)-2-(trimethylsilyl)- ethanesulfonamide |
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Formula | C14 H29 N O4 S Si |
Calculated formula | C14 H29 N O4 S Si |
SMILES | [C@H]1(C(=CO[C@@H](C(C)(C)C)O1)C)NS(=O)(=O)CC[Si](C)(C)C.[C@@H]1(C(=CO[C@H](C(C)(C)C)O1)C)NS(=O)(=O)CC[Si](C)(C)C |
Title of publication | Crystal structure of N-((2R*,4S*)-2-tert-butyl-5-methyl-4H-1,3-dioxin- 4-yl)-2-(trimethylsilyl)ethanesulfonamide, C~14~H~29~NO~4~Si |
Authors of publication | Tatarov, E.; Bruhn, C.; Frauenrath, H. |
Journal of publication | Zeitschrift für Kristallographie - New Crystal Structures |
Year of publication | 2007 |
Journal volume | 222 |
Journal issue | 2 |
Pages of publication | 139 - 140 |
a | 35.939 ± 0.002 Å |
b | 10.4219 ± 0.0007 Å |
c | 10.1829 ± 0.0008 Å |
α | 90° |
β | 90° |
γ | 90° |
Cell volume | 3814 ± 0.4 Å3 |
Cell temperature | 153 ± 2 K |
Ambient diffraction temperature | 153 ± 2 K |
Number of distinct elements | 6 |
Space group number | 61 |
Hermann-Mauguin space group symbol | P b c a |
Hall space group symbol | -P 2ac 2ab |
Residual factor for all reflections | 0.0633 |
Residual factor for significantly intense reflections | 0.0396 |
Weighted residual factors for significantly intense reflections | 0.096 |
Weighted residual factors for all reflections included in the refinement | 0.1047 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.014 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
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