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Information card for entry 8102923
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Coordinates | 8102923.cif |
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Chemical name | tetracaesium tetrahedro-tetragermanide |
---|---|
Formula | Cs4 Si4 |
Calculated formula | Cs4 Si4 |
Title of publication | Refinement of the crystal structures of the tetrahedro-tetrasilicides K~4~Si~4~, Rb~4~Si~4~ and Cs~4~Si~4~ |
Authors of publication | von Schnering, H. G.; Schwarz, M.; Chang, J.-H.; Peters, K.; Peters, E.-M.; Nesper, R. |
Journal of publication | Zeitschrift für Kristallographie - New Crystal Structures |
Year of publication | 2005 |
Journal volume | 220 |
Journal issue | 4 |
Pages of publication | 525 - 527 |
a | 13.51 ± 0.001 Å |
b | 13.51 ± 0.001 Å |
c | 13.51 ± 0.001 Å |
α | 90° |
β | 90° |
γ | 90° |
Cell volume | 2465.8 ± 0.3 Å3 |
Cell temperature | 293 ± 2 K |
Ambient diffraction temperature | 293 ± 2 K |
Number of distinct elements | 2 |
Space group number | 218 |
Hermann-Mauguin space group symbol | P -4 3 n |
Hall space group symbol | P -4n 2 3 |
Residual factor for all reflections | 0.023 |
Residual factor for significantly intense reflections | 0.0222 |
Weighted residual factors for significantly intense reflections | 0.0519 |
Weighted residual factors for all reflections included in the refinement | 0.0527 |
Goodness-of-fit parameter for all reflections included in the refinement | 0.954 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
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The link is: https://www.crystallography.net/8102923.html
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