Crystallography Open Database

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Searching journal of publication like 'Physica Status Solidi' volume of publication is 2

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9013102 CIFSiF d -3 m :15.4304; 5.4304; 5.4304
90; 90; 90		160.138Dutta, B. N.
Lattice constants and thermal expansion of silicon up to 900 C by X-ray method Locality: synthetic Sample: at T = 25 C
Physica Status Solidi, 1962, 2, 984-987
9013103 CIFSiF d -3 m :15.437; 5.437; 5.437
90; 90; 90		160.723Dutta, B. N.
Lattice constants and thermal expansion of silicon up to 900 C by X-ray method Locality: synthetic Sample: at T = 345 C
Physica Status Solidi, 1962, 2, 984-987
9013104 CIFSiF d -3 m :15.441; 5.441; 5.441
90; 90; 90		161.078Dutta, B. N.
Lattice constants and thermal expansion of silicon up to 900 C by X-ray method Locality: synthetic Sample: at T = 525 C
Physica Status Solidi, 1962, 2, 984-987
9013105 CIFSiF d -3 m :15.4432; 5.4432; 5.4432
90; 90; 90		161.273Dutta, B. N.
Lattice constants and thermal expansion of silicon up to 900 C by X-ray method Locality: synthetic Sample: at T = 615 C
Physica Status Solidi, 1962, 2, 984-987
9013106 CIFSiF d -3 m :15.4455; 5.4455; 5.4455
90; 90; 90		161.478Dutta, B. N.
Lattice constants and thermal expansion of silicon up to 900 C by X-ray method Locality: synthetic Sample: at T = 700 C
Physica Status Solidi, 1962, 2, 984-987
9013107 CIFSiF d -3 m :15.448; 5.448; 5.448
90; 90; 90		161.7Dutta, B. N.
Lattice constants and thermal expansion of silicon up to 900 C by X-ray method Locality: synthetic Sample: at T = 785 C
Physica Status Solidi, 1962, 2, 984-987
9013108 CIFSiF d -3 m :15.4515; 5.4515; 5.4515
90; 90; 90		162.012Dutta, B. N.
Lattice constants and thermal expansion of silicon up to 900 C by X-ray method Locality: synthetic Sample: at T = 878 C
Physica Status Solidi, 1962, 2, 984-987

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