Information card for entry 1520113

Structure parameters

• Formula: C24 H30 Ge Si
• Calculated formula: C24 H30 Ge Si
• SMILES: [Ge]([Si](C)(C)C)(c1ccc(cc1)C)(c1ccc(cc1)C)c1ccc(cc1)C
• Title of publication: Compounds of Group 14 Elements with an Element–Element (E = Si, Ge, Sn) Bond: Effect of the Nature of the Element Atom
• Authors of publication: Zaitsev, Kirill V.; Lermontova, Elmira Kh.; Churakov, Andrei V.; Tafeenko, Viktor A.; Tarasevich, Boris N.; Poleshchuk, Oleg Kh.; Kharcheva, Anastasia V.; Magdesieva, Tatiana V.; Nikitin, Oleg M.; Zaitseva, Galina S.; Karlov, Sergey S.
• Journal of publication: Organometallics
• Year of publication: 2015
• Journal volume: 34
• Journal issue: 12
• Pages of publication: 2765
• a: 10.4814 ± 0.0006 Å
• b: 19.1943 ± 0.0012 Å
• c: 12.056 ± 0.0007 Å
• α: 90°
• β: 109.021 ± 0.001°
• γ: 90°
• Cell volume: 2293 ± 0.2 ų
• Cell temperature: 150 ± 2 K
• Ambient diffraction temperature: 150 ± 2 K
• Number of distinct elements: 4
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.0375
• Residual factor for significantly intense reflections: 0.0292
• Weighted residual factors for significantly intense reflections: 0.0717
• Weighted residual factors for all reflections included in the refinement: 0.0751
• Goodness-of-fit parameter for all reflections included in the refinement: 1.023
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No