Information card for entry 4001714

Structure parameters

• Formula: C20 H42 N2 S4 Sn
• Calculated formula: C20 H42 N2 S4 Sn
• SMILES: CCCCN(C(=S)S[Sn](SC(N(CCCC)C)=S)(CCCC)CCCC)C
• Title of publication: Organotin Dithiocarbamates: Single-Source Precursors for Tin Sulfide Thin Films by Aerosol-Assisted Chemical Vapor Deposition (AACVD)
• Authors of publication: Ramasamy, Karthik; Kuznetsov, Vladimir L.; Gopal, Kandasamy; Malik, Mohammad A.; Raftery, James; Edwards, Peter P.; O'Brien, Paul
• Journal of publication: Chemistry of Materials
• Year of publication: 2013
• Journal volume: 25
• Journal issue: 3
• Pages of publication: 266 - 276
• a: 21.936 ± 0.003 Å
• b: 7.164 ± 0.0012 Å
• c: 21.873 ± 0.002 Å
• α: 90°
• β: 127.452 ± 0.009°
• γ: 90°
• Cell volume: 2728.8 ± 0.7 ų
• Cell temperature: 180 ± 2 K
• Ambient diffraction temperature: 180 ± 2 K
• Number of distinct elements: 5
• Space group number: 15
• Hermann-Mauguin space group symbol: C 1 2/c 1
• Hall space group symbol: -C 2yc
• Residual factor for all reflections: 0.0715
• Residual factor for significantly intense reflections: 0.0378
• Weighted residual factors for significantly intense reflections: 0.0601
• Weighted residual factors for all reflections included in the refinement: 0.0647
• Goodness-of-fit parameter for all reflections included in the refinement: 0.763
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No