Information card for entry 4001715

Structure parameters

• Formula: C26 H51 N2 S4 Sn
• Calculated formula: C26 H54 N2 S4 Sn
• SMILES: [Sn]1(SC(=S)N(CCCC)CCCC)(SC(=[S]1)N(CCCC)CCCC)(CCCC)CCCC
• Title of publication: Organotin Dithiocarbamates: Single-Source Precursors for Tin Sulfide Thin Films by Aerosol-Assisted Chemical Vapor Deposition (AACVD)
• Authors of publication: Ramasamy, Karthik; Kuznetsov, Vladimir L.; Gopal, Kandasamy; Malik, Mohammad A.; Raftery, James; Edwards, Peter P.; O'Brien, Paul
• Journal of publication: Chemistry of Materials
• Year of publication: 2013
• Journal volume: 25
• Journal issue: 3
• Pages of publication: 266 - 276
• a: 20.345 ± 0.005 Å
• b: 9.597 ± 0.005 Å
• c: 34.35 ± 0.005 Å
• α: 90 ± 0.005°
• β: 91.27 ± 0.005°
• γ: 90 ± 0.005°
• Cell volume: 6705 ± 4 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 5
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.0482
• Residual factor for significantly intense reflections: 0.0318
• Weighted residual factors for significantly intense reflections: 0.0755
• Weighted residual factors for all reflections included in the refinement: 0.0927
• Goodness-of-fit parameter for all reflections included in the refinement: 1.016
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No