Information card for entry 4001955
| Common name |
11080 |
| Formula |
C44 H26 F6 |
| Calculated formula |
C44 H26 F6 |
| SMILES |
FC(c1ccc(cc1)c1c2ccccc2c(c2c1c(c1ccccc1)c1c(c2c2ccccc2)cccc1)c1ccc(cc1)C(F)(F)F)(F)F |
| Title of publication |
Rubrene-Based Single-Crystal Organic Semiconductors: Synthesis, Electronic Structure, and Charge-Transport Properties |
| Authors of publication |
McGarry, Kathryn A.; Xie, Wei; Sutton, Christopher; Risko, Chad; Wu, Yanfei; Young, Victor G.; Brédas, Jean-Luc; Frisbie, C. Daniel; Douglas, Christopher J. |
| Journal of publication |
Chemistry of Materials |
| Year of publication |
2013 |
| Journal volume |
25 |
| Journal issue |
11 |
| Pages of publication |
2254 |
| a |
7.1162 ± 0.0005 Å |
| b |
31.179 ± 0.002 Å |
| c |
14.2075 ± 0.001 Å |
| α |
90° |
| β |
90° |
| γ |
90° |
| Cell volume |
3152.3 ± 0.4 Å3 |
| Cell temperature |
123 ± 2 K |
| Ambient diffraction temperature |
123 ± 2 K |
| Number of distinct elements |
3 |
| Space group number |
62 |
| Hermann-Mauguin space group symbol |
P n m a |
| Hall space group symbol |
-P 2ac 2n |
| Residual factor for all reflections |
0.0736 |
| Residual factor for significantly intense reflections |
0.0459 |
| Weighted residual factors for significantly intense reflections |
0.1241 |
| Weighted residual factors for all reflections included in the refinement |
0.1477 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.038 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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