Information card for entry 4002203
| Formula |
C24 H20 S2 |
| Calculated formula |
C24 H20 S2 |
| SMILES |
s1c2c3ccc(cc3sc2c2ccc(cc12)c1ccccc1)CCCC |
| Title of publication |
Effects of Substituted Alkyl Chain Length on Solution-Processable Layered Organic Semiconductor Crystals |
| Authors of publication |
Inoue, Satoru; Minemawari, Hiromi; Tsutsumi, Jun’ya; Chikamatsu, Masayuki; Yamada, Toshikazu; Horiuchi, Sachio; Tanaka, Mutsuo; Kumai, Reiji; Yoneya, Makoto; Hasegawa, Tatsuo |
| Journal of publication |
Chemistry of Materials |
| Year of publication |
2015 |
| Journal volume |
27 |
| Journal issue |
11 |
| Pages of publication |
3809 |
| a |
8.357 ± 0.002 Å |
| b |
5.95 ± 0.001 Å |
| c |
19.356 ± 0.003 Å |
| α |
90° |
| β |
97.453 ± 0.005° |
| γ |
90° |
| Cell volume |
954.3 ± 0.3 Å3 |
| Cell temperature |
300 K |
| Ambient diffraction temperature |
300 K |
| Number of distinct elements |
3 |
| Space group number |
4 |
| Hermann-Mauguin space group symbol |
P 1 21 1 |
| Hall space group symbol |
P 2yb |
| Residual factor for all reflections |
0.0671 |
| Residual factor for significantly intense reflections |
0.0486 |
| Weighted residual factors for significantly intense reflections |
0.1001 |
| Weighted residual factors for all reflections included in the refinement |
0.1148 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.073 |
| Diffraction radiation wavelength |
0.71075 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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https://www.crystallography.net/4002203.html