Information card for entry 4032952
| Formula |
C24 H22 S2 Se4 Si2 |
| Calculated formula |
C24 H22 S2 Se4 Si2 |
| SMILES |
[se]1c2c(c3c4cc([se]c4sc13)[Si](C)(C)C)c1c3c4cc([se]c4sc3[se]c1cc2)[Si](C)(C)C |
| Title of publication |
Diseleno[2,3-b:3',2'-d]selenophene and Diseleno[2,3-b:3',2'-d] thiophene: Building Blocks for the Construction of [7]Helicenes. |
| Authors of publication |
Xu, Wan; Wu, Longlong; Fang, Maohong; Ma, Zhiying; Shan, Zhen; Li, Chunli; Wang, Hua |
| Journal of publication |
The Journal of organic chemistry |
| Year of publication |
2017 |
| Journal volume |
82 |
| Journal issue |
20 |
| Pages of publication |
11192 - 11197 |
| a |
39.587 ± 0.005 Å |
| b |
39.587 ± 0.005 Å |
| c |
9.49 ± 0.003 Å |
| α |
90° |
| β |
90° |
| γ |
120° |
| Cell volume |
12880 ± 5 Å3 |
| Cell temperature |
296 ± 2 K |
| Ambient diffraction temperature |
296 ± 2 K |
| Number of distinct elements |
5 |
| Space group number |
148 |
| Hermann-Mauguin space group symbol |
R -3 :H |
| Hall space group symbol |
-R 3 |
| Residual factor for all reflections |
0.0697 |
| Residual factor for significantly intense reflections |
0.0366 |
| Weighted residual factors for significantly intense reflections |
0.077 |
| Weighted residual factors for all reflections included in the refinement |
0.0843 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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