Information card for entry 4064568

Structure parameters

• Formula: C32 H48 Cl8 Ga4 Si4
• Calculated formula: C32 H48 Cl8 Ga4 Si4
• SMILES: [Ga]12(Cl)[Cl][Ga](Cl)([Cl]2)C(=Cc2cccc(C=C([Ga]3(Cl)[Cl][Ga](Cl)([Cl]3)C(=Cc3cc(C=C1[Si](C)(C)C)ccc3)[Si](C)(C)C)[Si](C)(C)C)c2)[Si](C)(C)C
• Title of publication: A Unique Chlorine‒Methyl Exchange Reaction upon Treatment of Dichloroorganogallium Compounds, RGaCl2, with the Bulky Alkyllithium Derivative LiC(SiMe3)3
• Authors of publication: Uhl, Werner; Claesener, Michael; Kovert, Dirk; Hepp, Alexander; Würthwein, Ernst-Ulrich; Ghavtadze, Nugzar
• Journal of publication: Organometallics
• Year of publication: 2011
• Journal volume: 30
• Journal issue: 11
• Pages of publication: 3075
• a: 24.037 ± 0.005 Å
• b: 10.269 ± 0.002 Å
• c: 19.625 ± 0.004 Å
• α: 90°
• β: 92.771 ± 0.005°
• γ: 90°
• Cell volume: 4838.5 ± 1.7 ų
• Cell temperature: 153 ± 2 K
• Ambient diffraction temperature: 153 ± 2 K
• Number of distinct elements: 5
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.1478
• Residual factor for significantly intense reflections: 0.0707
• Weighted residual factors for significantly intense reflections: 0.1034
• Weighted residual factors for all reflections included in the refinement: 0.1197
• Goodness-of-fit parameter for all reflections included in the refinement: 0.979
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No