Information card for entry 4064569

Structure parameters

• Formula: C52 H42 Cl4 Ga2 Si2
• Calculated formula: C52 H42 Cl4 Ga2 Si2
• SMILES: C(=C\c1ccccc1)(\[Ga]1([Cl][Ga](C(=C\c2ccccc2)/[Si](c2ccccc2)(c2ccccc2)c2ccccc2)([Cl]1)Cl)Cl)[Si](c1ccccc1)(c1ccccc1)c1ccccc1
• Title of publication: A Unique Chlorine‒Methyl Exchange Reaction upon Treatment of Dichloroorganogallium Compounds, RGaCl2, with the Bulky Alkyllithium Derivative LiC(SiMe3)3
• Authors of publication: Uhl, Werner; Claesener, Michael; Kovert, Dirk; Hepp, Alexander; Würthwein, Ernst-Ulrich; Ghavtadze, Nugzar
• Journal of publication: Organometallics
• Year of publication: 2011
• Journal volume: 30
• Journal issue: 11
• Pages of publication: 3075
• a: 9.911 ± 0.002 Å
• b: 10.461 ± 0.002 Å
• c: 13.4 ± 0.003 Å
• α: 68.39 ± 0.03°
• β: 82.91 ± 0.03°
• γ: 65.21 ± 0.03°
• Cell volume: 1171.8 ± 0.6 ų
• Cell temperature: 153 ± 2 K
• Ambient diffraction temperature: 153 ± 2 K
• Number of distinct elements: 5
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0483
• Residual factor for significantly intense reflections: 0.0327
• Weighted residual factors for significantly intense reflections: 0.0735
• Weighted residual factors for all reflections included in the refinement: 0.0774
• Goodness-of-fit parameter for all reflections included in the refinement: 0.952
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No