Information card for entry 4067855

Structure parameters

• Formula: C32 H62 O P2 S2 Si4 Sn
• Calculated formula: C32 H62 O P2 S2 Si4 Sn
• SMILES: [Sn]12(P(C([Si](C)(C)C)[Si](C)(C)C)c3ccccc3[S]1C)P(C([Si](C)(C)C)[Si](C)(C)C)c1ccccc1[S]2C.O(CC)CC
• Title of publication: Hypervalent Sulfur-Functionalized Diphosphagermylene and Diphosphastannylene Compounds
• Authors of publication: Izod, Keith; Clark, Ewan R.; Clegg, William; Harrington, Ross W.
• Journal of publication: Organometallics
• Year of publication: 2012
• Journal volume: 31
• Journal issue: 1
• Pages of publication: 246
• a: 16.9798 ± 0.0015 Å
• b: 11.0771 ± 0.001 Å
• c: 23.0424 ± 0.0018 Å
• α: 90°
• β: 99.466 ± 0.008°
• γ: 90°
• Cell volume: 4275 ± 0.6 ų
• Cell temperature: 150 ± 2 K
• Ambient diffraction temperature: 150 ± 2 K
• Number of distinct elements: 7
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.1001
• Residual factor for significantly intense reflections: 0.0596
• Weighted residual factors for significantly intense reflections: 0.1594
• Weighted residual factors for all reflections included in the refinement: 0.1694
• Goodness-of-fit parameter for all reflections included in the refinement: 0.997
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No