Information card for entry 4070126

Structure parameters

• Formula: C53 H76 Bi Ga N4 O Si2
• Calculated formula: C53 H76 Bi Ga N4 O Si2
• SMILES: [Bi]1(N([Si](C)(C)C)c2c3c(N1[Si](C)(C)C)cccc3ccc2)O[Ga]1(N(C(C)=CC(=[N]1c1c(cccc1C(C)C)C(C)C)C)c1c(cccc1C(C)C)C(C)C)C.c1(ccccc1)C
• Title of publication: Synthesis and Structural Characterization of Heterobimetallic Bismuth Complexes with Main Group and Transition Metals
• Authors of publication: Nekoueishahraki, Bijan; Jana, Anukul; Roesky, Herbert W.; Mishra, Lallan; Stern, Daniel; Stalke, Dietmar
• Journal of publication: Organometallics
• Year of publication: 2009
• Journal volume: 28
• Journal issue: 19
• Pages of publication: 5733
• a: 19.2651 ± 0.0017 Å
• b: 10.7195 ± 0.001 Å
• c: 26.118 ± 0.002 Å
• α: 90°
• β: 99.534 ± 0.001°
• γ: 90°
• Cell volume: 5319.2 ± 0.8 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 7
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.0212
• Residual factor for significantly intense reflections: 0.0176
• Weighted residual factors for significantly intense reflections: 0.0387
• Weighted residual factors for all reflections included in the refinement: 0.0397
• Goodness-of-fit parameter for all reflections included in the refinement: 1.036
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No