Information card for entry 4074895

Structure parameters

• Common name: 5
• Chemical name: Bis[N'-(dimethylamino)N",N"-(dimethyl)carbamoimidato-N,O]diphenylsilicon(IV)
• Formula: C22 H34 N6 O2 Si
• Calculated formula: C22 H34 N6 O2 Si
• SMILES: [Si]12(OC(=N[N]1(C)C)N(C)C)(OC(=N[N]2(C)C)N(C)C)(c1ccccc1)c1ccccc1
• Title of publication: Octahedral and Bicapped-Tetrahedral Silicon Configurations in the Solid State and Their Dynamic Coexistence in Solution
• Authors of publication: Kalikhman, Inna; Gostevskii, Boris; Botoshansky, Mark; Kaftory, Menahem; Tessier, Claire A.; Panzner, Matthew J.; Youngs, Wiley J.; Kost, Daniel
• Journal of publication: Organometallics
• Year of publication: 2006
• Journal volume: 25
• Journal issue: 5
• Pages of publication: 1252 - 1258
• a: 34.89 ± 0.003 Å
• b: 9.3494 ± 0.0008 Å
• c: 15.8794 ± 0.0013 Å
• α: 90°
• β: 114.996 ± 0.001°
• γ: 90°
• Cell volume: 4694.7 ± 0.7 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 5
• Space group number: 15
• Hermann-Mauguin space group symbol: C 1 2/c 1
• Hall space group symbol: -C 2yc
• Residual factor for all reflections: 0.0585
• Residual factor for significantly intense reflections: 0.0468
• Weighted residual factors for significantly intense reflections: 0.1073
• Weighted residual factors for all reflections included in the refinement: 0.1127
• Goodness-of-fit parameter for all reflections included in the refinement: 1.061
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No