Information card for entry 4074897

Structure parameters

• Common name: 8
• Chemical name: Bis[N-(cyclopentylideneimino)acetimidato-N,O]dimethylsilicon(IV)
• Formula: C16 H28 N4 O2 Si
• Calculated formula: C16 H28 N4 O2 Si
• SMILES: C1(=N[N]([Si]2(C)(O1)(C)[N](=C1CCCC1)N=C(C)O2)=C1CCCC1)C
• Title of publication: Octahedral and Bicapped-Tetrahedral Silicon Configurations in the Solid State and Their Dynamic Coexistence in Solution
• Authors of publication: Kalikhman, Inna; Gostevskii, Boris; Botoshansky, Mark; Kaftory, Menahem; Tessier, Claire A.; Panzner, Matthew J.; Youngs, Wiley J.; Kost, Daniel
• Journal of publication: Organometallics
• Year of publication: 2006
• Journal volume: 25
• Journal issue: 5
• Pages of publication: 1252 - 1258
• a: 13.576 ± 0.0009 Å
• b: 8.0012 ± 0.0005 Å
• c: 16.4807 ± 0.0011 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 1790.2 ± 0.2 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 5
• Space group number: 60
• Hermann-Mauguin space group symbol: P b c n
• Hall space group symbol: -P 2n 2ab
• Residual factor for all reflections: 0.042
• Residual factor for significantly intense reflections: 0.0402
• Weighted residual factors for significantly intense reflections: 0.1028
• Weighted residual factors for all reflections included in the refinement: 0.1039
• Goodness-of-fit parameter for all reflections included in the refinement: 1.109
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No