Information card for entry 4077750

Structure parameters

• Formula: C32 H66 Ga2 N8 Si4
• Calculated formula: C32 H66 Ga2 N8 Si4
• SMILES: C1(C(=C(C(=C1C)C)C)C)(C)[Ga]1([N](=N#N)[Ga](C2(C(=C(C(=C2C)C)C)C)C)([N]1=N#N)N([Si](C)(C)C)[Si](C)(C)C)N([Si](C)(C)C)[Si](C)(C)C
• Title of publication: Novel Ga2N2Ring Systems by Reaction of Pentamethylcyclopentadienylgallium with Organic Azides
• Authors of publication: Jutzi, Peter; Neumann, Beate; Reumann, Guido; Stammler, Hans-Georg
• Journal of publication: Organometallics
• Year of publication: 1999
• Journal volume: 18
• Journal issue: 10
• Pages of publication: 2037
• a: 9.4749 ± 0.0006 Å
• b: 9.7282 ± 0.0007 Å
• c: 13.8581 ± 0.0009 Å
• α: 88.476 ± 0.001°
• β: 70.042 ± 0.001°
• γ: 64.883 ± 0.001°
• Cell volume: 1076.56 ± 0.13 ų
• Cell temperature: 163 ± 2 K
• Ambient diffraction temperature: 163 ± 2 K
• Number of distinct elements: 5
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0752
• Residual factor for significantly intense reflections: 0.042
• Weighted residual factors for significantly intense reflections: 0.0796
• Weighted residual factors for all reflections included in the refinement: 0.0912
• Goodness-of-fit parameter for all reflections included in the refinement: 1.013
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No