Information card for entry 4078595
| Formula |
C27 H33 N2 P Si |
| Calculated formula |
C27 H33 N2 P Si |
| SMILES |
[Si]1(P(c2ccccc2)c2ccccc2)[N](=C(c2ccccc2)N1C(C)(C)C)C(C)(C)C |
| Title of publication |
Facile Access to the Functionalized N-Donor Stabilized Silylenes PhC(NtBu)2SiX (X = PPh2, NPh2, NCy2, NiPr2, NMe2, N(SiMe3)2, OtBu) |
| Authors of publication |
Azhakar, Ramachandran; Ghadwal, Rajendra S.; Roesky, Herbert W.; Wolf, Hilke; Stalke, Dietmar |
| Journal of publication |
Organometallics |
| Year of publication |
2012 |
| Journal volume |
31 |
| Journal issue |
12 |
| Pages of publication |
4588 |
| a |
8.384 ± 0.003 Å |
| b |
9.073 ± 0.003 Å |
| c |
17.254 ± 0.004 Å |
| α |
89.19 ± 0.01° |
| β |
86.06 ± 0.02° |
| γ |
72.47 ± 0.01° |
| Cell volume |
1248.5 ± 0.7 Å3 |
| Cell temperature |
100 ± 2 K |
| Ambient diffraction temperature |
100 ± 2 K |
| Number of distinct elements |
5 |
| Space group number |
2 |
| Hermann-Mauguin space group symbol |
P -1 |
| Hall space group symbol |
-P 1 |
| Residual factor for all reflections |
0.0333 |
| Residual factor for significantly intense reflections |
0.0311 |
| Weighted residual factors for significantly intense reflections |
0.0828 |
| Weighted residual factors for all reflections included in the refinement |
0.0841 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.061 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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