Information card for entry 4078596
| Formula |
C27 H45 N3 Si |
| Calculated formula |
C27 H45 N3 Si |
| SMILES |
[Si]1([N](=C(N1C(C)(C)C)c1ccccc1)C(C)(C)C)N(C1CCCCC1)C1CCCCC1 |
| Title of publication |
Facile Access to the Functionalized N-Donor Stabilized Silylenes PhC(NtBu)2SiX (X = PPh2, NPh2, NCy2, NiPr2, NMe2, N(SiMe3)2, OtBu) |
| Authors of publication |
Azhakar, Ramachandran; Ghadwal, Rajendra S.; Roesky, Herbert W.; Wolf, Hilke; Stalke, Dietmar |
| Journal of publication |
Organometallics |
| Year of publication |
2012 |
| Journal volume |
31 |
| Journal issue |
12 |
| Pages of publication |
4588 |
| a |
15.04 ± 0.004 Å |
| b |
11.542 ± 0.004 Å |
| c |
16.516 ± 0.006 Å |
| α |
90° |
| β |
111.7 ± 0.02° |
| γ |
90° |
| Cell volume |
2663.9 ± 1.6 Å3 |
| Cell temperature |
100 ± 2 K |
| Ambient diffraction temperature |
100 ± 2 K |
| Number of distinct elements |
4 |
| Space group number |
14 |
| Hermann-Mauguin space group symbol |
P 1 21/c 1 |
| Hall space group symbol |
-P 2ybc |
| Residual factor for all reflections |
0.0493 |
| Residual factor for significantly intense reflections |
0.0379 |
| Weighted residual factors for significantly intense reflections |
0.0876 |
| Weighted residual factors for all reflections included in the refinement |
0.0921 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.043 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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