Information card for entry 4078669

Structure parameters

• Formula: C32 H56 Ir O2 P4 Rh Si
• Calculated formula: C32 H56 Ir O2 P4 Rh Si
• Title of publication: Multiple Si‒H Bond Activations in a Bis(diethylphosphino)methane-Bridged Complex of Rhodium and Iridium: Synthesis of an Unusual Bis(silyl)/μ-Silylene Complex
• Authors of publication: Mobarok, Md Hosnay; Ferguson, Michael J.; Cowie, Martin
• Journal of publication: Organometallics
• Year of publication: 2012
• Journal volume: 31
• Journal issue: 13
• Pages of publication: 4722
• a: 10.0265 ± 0.0004 Å
• b: 15.2613 ± 0.0007 Å
• c: 24.6102 ± 0.0011 Å
• α: 90°
• β: 93.734 ± 0.001°
• γ: 90°
• Cell volume: 3757.8 ± 0.3 ų
• Cell temperature: 173 ± 2 K
• Ambient diffraction temperature: 173 ± 2 K
• Number of distinct elements: 7
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.0363
• Residual factor for significantly intense reflections: 0.0262
• Weighted residual factors for significantly intense reflections: 0.057
• Weighted residual factors for all reflections included in the refinement: 0.0617
• Goodness-of-fit parameter for all reflections included in the refinement: 1.026
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No