Information card for entry 4086444

Structure parameters

• Formula: C22 H42 O2 Si4 W
• Calculated formula: C22 H42 O2 Si4 W
• SMILES: [W]123(C#[O])(C#[O])([c]4([c]1([c]2([c]3([c]4C)C)C)C)C)#[Si]C([Si](C)(C)C)([Si](C)(C)C)[Si](C)(C)C
• Title of publication: Synthesis of a Tungsten‒Silylyne Complex via Stepwise Proton and Hydride Abstraction from a Hydrido Hydrosilylene Complex
• Authors of publication: Fukuda, Tetsuya; Yoshimoto, Takashi; Hashimoto, Hisako; Tobita, Hiromi
• Journal of publication: Organometallics
• Year of publication: 2016
• Journal volume: 35
• Journal issue: 7
• Pages of publication: 921
• a: 9.259 ± 0.0011 Å
• b: 12.6926 ± 0.001 Å
• c: 13.2925 ± 0.0015 Å
• α: 68.987 ± 0.006°
• β: 89.604 ± 0.004°
• γ: 79.879 ± 0.003°
• Cell volume: 1432.9 ± 0.3 ų
• Cell temperature: 150 ± 2 K
• Ambient diffraction temperature: 150 ± 2 K
• Number of distinct elements: 5
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0291
• Residual factor for significantly intense reflections: 0.0261
• Weighted residual factors for significantly intense reflections: 0.0718
• Weighted residual factors for all reflections included in the refinement: 0.081
• Goodness-of-fit parameter for all reflections included in the refinement: 1.204
• Diffraction radiation wavelength: 0.71069 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No