Information card for entry 4089523

Structure parameters

• Formula: C40 H54 Cl2 N4 O9 P2 Sn2
• Calculated formula: C40 H54 Cl2 N4 O9 P2 Sn2
• SMILES: [Sn]123(Cl)([O]=P(OC(C)(C)C)(OC(C)(C)C)O[Sn]4(Cl)([O]=P(OC(C)(C)C)(O1)OC(C)(C)C)(O2)[N](=Nc1c4cccc1)c1ccccc1)[N](=Nc1c3cccc1)c1ccccc1
• Title of publication: Stabilizing the [RSn(μ2-O)SnR] Motif through Intramolecular N→Sn Coordination. Synthesis and Characterization of [(RSn)2(μ2-O)(μ2-FcCOO)2(η-FcCOO)2]·THF and {(RSn)2(μ2-O)[(t-BuO)2PO2]2Cl2}·THF·2H2O (R = 2-(Phenylazo)phenyl)
• Authors of publication: Chandrasekhar, Vadapalli; Metre, Ramesh K.; Biswas, Sourav
• Journal of publication: Organometallics
• Year of publication: 2013
• Journal volume: 32
• Journal issue: 11
• Pages of publication: 3419
• a: 11.542 ± 0.005 Å
• b: 14.83 ± 0.005 Å
• c: 16.783 ± 0.005 Å
• α: 80.917 ± 0.005°
• β: 89.877 ± 0.005°
• γ: 80.158 ± 0.005°
• Cell volume: 2794 ± 1.7 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 7
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0859
• Residual factor for significantly intense reflections: 0.0675
• Weighted residual factors for significantly intense reflections: 0.1968
• Weighted residual factors for all reflections included in the refinement: 0.2193
• Goodness-of-fit parameter for all reflections included in the refinement: 1.004
• Diffraction radiation wavelength: 0.71069 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No