Crystallography Open Database

Information card for entry 4111637

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Structure parameters

Formula	C26 H12 F6 N2 S4
Calculated formula	C26 H12 F6 N2 S4
SMILES	s1c2nc(sc2nc1c1sc(cc1)c1ccc(cc1)C(F)(F)F)c1sc(cc1)c1ccc(cc1)C(F)(F)F
Title of publication	High Performance n-Type Organic Field-Effect Transistors Based on π-Electronic Systems with Trifluoromethylphenyl Groups
Authors of publication	Shinji Ando; Jun-ichi Nishida; Hirokazu Tada; Youji Inoue; Shizuo Tokito; Yoshiro Yamashita
Journal of publication	Journal of the American Chemical Society
Year of publication	2005
Journal volume	127
Pages of publication	5336 - 5337
a	6.0507 Å
b	8.1828 Å
c	23.2685 Å
α	98°
β	93°
γ	97°
Cell volume	1129.53 Å³
Cell temperature	296.2 K
Number of distinct elements	5
Space group number	2
Hermann-Mauguin space group symbol	P -1
Hall space group symbol	-P 1
Residual factor for significantly intense reflections	0.0828
Weighted residual factors for all reflections included in the refinement	0.1971
Goodness-of-fit parameter for all reflections included in the refinement	0.969
Diffraction radiation wavelength	0.7107 Å
Diffraction radiation type	MoKα
Has coordinates	Yes
Has disorder	No
Has F_obs	No

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