Information card for entry 4111638

Structure parameters

• Formula: C22 H12 F6 S2
• Calculated formula: C22 H12 F6 S2
• Title of publication: High Performance n-Type Organic Field-Effect Transistors Based on π-Electronic Systems with Trifluoromethylphenyl Groups
• Authors of publication: Shinji Ando; Jun-ichi Nishida; Hirokazu Tada; Youji Inoue; Shizuo Tokito; Yoshiro Yamashita
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2005
• Journal volume: 127
• Pages of publication: 5336 - 5337
• a: 6.154 ± 0.009 Å
• b: 7.604 ± 0.009 Å
• c: 19.5 ± 0.03 Å
• α: 90°
• β: 97.18 ± 0.06°
• γ: 90°
• Cell volume: 905 ± 2 ų
• Cell temperature: 93.2 K
• Number of distinct elements: 4
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/a 1
• Hall space group symbol: -P 2yab
• Residual factor for significantly intense reflections: 0.0507
• Weighted residual factors for all reflections included in the refinement: 0.0602
• Goodness-of-fit parameter for all reflections included in the refinement: 0.866
• Diffraction radiation wavelength: 0.7107 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No