Information card for entry 4127551

Structure parameters

• Formula: C44 H79 B Co N2 O P3 Si
• Calculated formula: C44 H79 B Co N2 O P3 Si
• SMILES: [CoH2]12([P](C(C)C)(C(C)C)C[B](c3ccccc3)(C[P]1(C(C)C)C(C)C)C[P]2(C(C)C)C(C)C)[SiH]([n+]1ccc(N(C)C)cc1)c1ccccc1.O1CCCC1
• Title of publication: Activations of all Bonds to Silicon (Si-H, Si-C) in a Silane with Extrusion of [CoSiCo] Silicide Cores.
• Authors of publication: Handford, Rex C.; Smith, Patrick W.; Tilley, T. Don
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2019
• Journal volume: 141
• Journal issue: 22
• Pages of publication: 8769 - 8772
• a: 21.403 ± 0.001 Å
• b: 10.1831 ± 0.0005 Å
• c: 21.2625 ± 0.001 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 4634.1 ± 0.4 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100.15 K
• Number of distinct elements: 8
• Space group number: 29
• Hermann-Mauguin space group symbol: P c a 21
• Hall space group symbol: P 2c -2ac
• Residual factor for all reflections: 0.0327
• Residual factor for significantly intense reflections: 0.0289
• Weighted residual factors for significantly intense reflections: 0.0709
• Weighted residual factors for all reflections included in the refinement: 0.0797
• Goodness-of-fit parameter for all reflections included in the refinement: 1.119
• Diffraction radiation wavelength: 0.7288 Å
• Diffraction radiation type: synchrotron
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No