Information card for entry 4131533

Structure parameters

• Formula: C42 H68 Cl2 N2 Si2
• Calculated formula: C42 H68 Cl2 N2 Si2
• SMILES: C[Si](=C1C(CC(C)(C)N1c1c(cccc1C(C)C)C(C)C)(C)C)(Cl)[Si](C)(=C1C(CC(C)(C)N1c1c(cccc1C(C)C)C(C)C)(C)C)Cl
• Title of publication: Organosilicon Radicals with Si-H and Si-Me Bonds from Commodity Precursors.
• Authors of publication: Kundu, Subrata; Samuel, Prinson P.; Sinhababu, Soumen; Luebben, Anna V.; Dittrich, Birger; Andrada, Diego M.; Frenking, Gernot; Stückl, A Claudia; Schwederski, Brigitte; Paretzki, Alexa; Kaim, Wolfgang; Roesky, Herbert W.
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2017
• Journal volume: 139
• Journal issue: 32
• Pages of publication: 11028 - 11031
• a: 17.9435 ± 0.0005 Å
• b: 11.618 ± 0.002 Å
• c: 20.3 ± 0.002 Å
• α: 90°
• β: 96.496 ± 0.006°
• γ: 90°
• Cell volume: 4204.7 ± 0.8 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 5
• Space group number: 15
• Hermann-Mauguin space group symbol: C 1 2/c 1
• Hall space group symbol: -C 2yc
• Residual factor for all reflections: 0.0417
• Residual factor for significantly intense reflections: 0.0413
• Weighted residual factors for significantly intense reflections: 0.1245
• Weighted residual factors for all reflections included in the refinement: 0.1249
• Goodness-of-fit parameter for all reflections included in the refinement: 1.068
• Diffraction radiation wavelength: 0.6358 Å
• Diffraction radiation type: synchrotron
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No