Information card for entry 4132739
| Formula |
C2 Cl12 Si4 |
| Calculated formula |
C2 Cl12 Si4 |
| SMILES |
C(=C([Si](Cl)(Cl)Cl)[Si](Cl)(Cl)Cl)([Si](Cl)(Cl)Cl)[Si](Cl)(Cl)Cl |
| Title of publication |
Exhaustively Trichlorosilylated C<sub>1</sub> and C<sub>2</sub> Building Blocks: Beyond the Müller-Rochow Direct Process. |
| Authors of publication |
Georg, Isabelle; Teichmann, Julian; Bursch, Markus; Tillmann, Jan; Endeward, Burkhard; Bolte, Michael; Lerner, Hans-Wolfram; Grimme, Stefan; Wagner, Matthias |
| Journal of publication |
Journal of the American Chemical Society |
| Year of publication |
2018 |
| Journal volume |
140 |
| Journal issue |
30 |
| Pages of publication |
9696 - 9708 |
| a |
16.5007 ± 0.0011 Å |
| b |
12.171 ± 0.0007 Å |
| c |
18.2951 ± 0.0012 Å |
| α |
90° |
| β |
90° |
| γ |
90° |
| Cell volume |
3674.2 ± 0.4 Å3 |
| Cell temperature |
173 ± 2 K |
| Ambient diffraction temperature |
173 ± 2 K |
| Number of distinct elements |
3 |
| Space group number |
61 |
| Hermann-Mauguin space group symbol |
P b c a |
| Hall space group symbol |
-P 2ac 2ab |
| Residual factor for all reflections |
0.043 |
| Residual factor for significantly intense reflections |
0.0353 |
| Weighted residual factors for significantly intense reflections |
0.0889 |
| Weighted residual factors for all reflections included in the refinement |
0.093 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.017 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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