Information card for entry 4132740
| Formula |
C8 H8 Cl6 Si2 |
| Calculated formula |
C8 H8 Cl6 Si2 |
| SMILES |
[Si](Cl)(Cl)(Cl)c1c([Si](Cl)(Cl)Cl)cc(c(c1)C)C |
| Title of publication |
Exhaustively Trichlorosilylated C<sub>1</sub> and C<sub>2</sub> Building Blocks: Beyond the Müller-Rochow Direct Process. |
| Authors of publication |
Georg, Isabelle; Teichmann, Julian; Bursch, Markus; Tillmann, Jan; Endeward, Burkhard; Bolte, Michael; Lerner, Hans-Wolfram; Grimme, Stefan; Wagner, Matthias |
| Journal of publication |
Journal of the American Chemical Society |
| Year of publication |
2018 |
| Journal volume |
140 |
| Journal issue |
30 |
| Pages of publication |
9696 - 9708 |
| a |
9.1268 ± 0.0008 Å |
| b |
9.5234 ± 0.0009 Å |
| c |
10.1718 ± 0.0009 Å |
| α |
77.516 ± 0.007° |
| β |
87.755 ± 0.007° |
| γ |
62.147 ± 0.007° |
| Cell volume |
761.25 ± 0.13 Å3 |
| Cell temperature |
173 ± 2 K |
| Ambient diffraction temperature |
173 ± 2 K |
| Number of distinct elements |
4 |
| Space group number |
2 |
| Hermann-Mauguin space group symbol |
P -1 |
| Hall space group symbol |
-P 1 |
| Residual factor for all reflections |
0.0374 |
| Residual factor for significantly intense reflections |
0.0276 |
| Weighted residual factors for significantly intense reflections |
0.0651 |
| Weighted residual factors for all reflections included in the refinement |
0.0681 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.032 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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https://www.crystallography.net/4132740.html
