Information card for entry 4300802

Structure parameters

• Common name: [Ar*SnNH~2~]~2~.hexane
• Formula: C78 H116 N2 Sn2
• Calculated formula: C78 H116 N2 Sn2
• SMILES: c1(c(cccc1c1c(cc(cc1C(C)C)C(C)C)C(C)C)c1c(C(C)C)cc(cc1C(C)C)C(C)C)[Sn]1[NH2][Sn](c2c(cccc2c2c(cc(cc2C(C)C)C(C)C)C(C)C)c2c(cc(cc2C(C)C)C(C)C)C(C)C)[NH2]1.C(CCC)CC
• Title of publication: Synthesis and Characterization of Ge(II), Sn(II), and Pb(II) Monoamides with -NH2 Ligands
• Authors of publication: Stanciu, Corneliu; Hino, Shirley S.; Stender, Matthias; Richards, Anne F.; Olmstead, Marilyn M.; Power, Philip P.
• Journal of publication: Inorganic Chemistry
• Year of publication: 2005
• Journal volume: 44
• Journal issue: 8
• Pages of publication: 2774 - 2780
• a: 9.7531 ± 0.0004 Å
• b: 13.2513 ± 0.0005 Å
• c: 13.7548 ± 0.0005 Å
• α: 92.978 ± 0.001°
• β: 93.222 ± 0.001°
• γ: 94.684 ± 0.001°
• Cell volume: 1766.09 ± 0.12 ų
• Cell temperature: 90 ± 2 K
• Ambient diffraction temperature: 90 ± 2 K
• Number of distinct elements: 4
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0249
• Residual factor for significantly intense reflections: 0.0226
• Weighted residual factors for significantly intense reflections: 0.0575
• Weighted residual factors for all reflections included in the refinement: 0.0587
• Goodness-of-fit parameter for all reflections included in the refinement: 1.056
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No