Information card for entry 4349382

Structure parameters

• Formula: C32 H66 Fe Ga2 N2 Si4
• Calculated formula: C32 H66 Fe Ga2 N2 Si4
• SMILES: C[Si](C)(C)N([Fe]([Ga]1234[c]5([c]1([c]2([c]3([c]45C)C)C)C)C)(N([Si](C)(C)C)[Si](C)(C)C)[Ga]1234[c]5([c]1([c]2([c]3([c]45C)C)C)C)C)[Si](C)(C)C
• Title of publication: Diverse Reactivity of ECp* (E = Al, Ga) toward Low-Coordinate Transition Metal Amides [TM(N(SiMe₃)₂)₂] (TM = Fe, Co, Zn): Insertion, Cp* Transfer, and Orthometalation.
• Authors of publication: Weßing, Jana; Göbel, Christoph; Weber, Birgit; Gemel, Christian; Fischer, Roland A.
• Journal of publication: Inorganic chemistry
• Year of publication: 2017
• Journal volume: 56
• Journal issue: 6
• Pages of publication: 3517 - 3525
• a: 16.3997 ± 0.0003 Å
• b: 15.1616 ± 0.0002 Å
• c: 16.9223 ± 0.0003 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 4207.66 ± 0.12 ų
• Cell temperature: 112 K
• Ambient diffraction temperature: 112 K
• Number of distinct elements: 6
• Space group number: 60
• Hermann-Mauguin space group symbol: P b c n
• Hall space group symbol: -P 2n 2ab
• Residual factor for all reflections: 0.0282
• Residual factor for significantly intense reflections: 0.0252
• Weighted residual factors for significantly intense reflections: 0.0663
• Weighted residual factors for all reflections included in the refinement: 0.0683
• Goodness-of-fit parameter for all reflections included in the refinement: 1.037
• Diffraction radiation probe: x-ray
• Diffraction radiation wavelength: 1.54184 Å
• Diffraction radiation type: CuKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No