Utilizing Sulfoxide···Iodine Halogen Bonding for Cocrystallization
Authors of publication
Eccles, Kevin S.; Morrison, Robin E.; Stokes, Stephen P.; O’Mahony, Graham E.; Hayes, John A.; Kelly, Dawn M.; O’Boyle, Noel M.; Fábián, László; Moynihan, Humphrey A.; Maguire, Anita R.; Lawrence, Simon E.
Journal of publication
Crystal Growth & Design
Year of publication
2012
Journal volume
12
Journal issue
6
Pages of publication
2969
a
5.6947 ± 0.001 Å
b
8.1334 ± 0.0013 Å
c
25.063 ± 0.005 Å
α
90°
β
90°
γ
90°
Cell volume
1160.8 ± 0.4 Å3
Cell temperature
300 ± 2 K
Ambient diffraction temperature
300 ± 2 K
Number of distinct elements
4
Space group number
19
Hermann-Mauguin space group symbol
P 21 21 21
Hall space group symbol
P 2ac 2ab
Residual factor for all reflections
0.0542
Residual factor for significantly intense reflections
0.0386
Weighted residual factors for significantly intense reflections
0.0952
Weighted residual factors for all reflections included in the refinement
0.1029
Goodness-of-fit parameter for all reflections included in the refinement