Utilizing Sulfoxide···Iodine Halogen Bonding for Cocrystallization
Authors of publication
Eccles, Kevin S.; Morrison, Robin E.; Stokes, Stephen P.; O’Mahony, Graham E.; Hayes, John A.; Kelly, Dawn M.; O’Boyle, Noel M.; Fábián, László; Moynihan, Humphrey A.; Maguire, Anita R.; Lawrence, Simon E.
Journal of publication
Crystal Growth & Design
Year of publication
2012
Journal volume
12
Journal issue
6
Pages of publication
2969
a
16.011 ± 0.003 Å
b
32.093 ± 0.006 Å
c
4.0823 ± 0.0008 Å
α
90°
β
90°
γ
90°
Cell volume
2097.7 ± 0.7 Å3
Cell temperature
293 ± 2 K
Ambient diffraction temperature
293 ± 2 K
Number of distinct elements
4
Space group number
43
Hermann-Mauguin space group symbol
F d d 2
Hall space group symbol
F 2 -2d
Residual factor for all reflections
0.0336
Residual factor for significantly intense reflections
0.0296
Weighted residual factors for significantly intense reflections
0.0662
Weighted residual factors for all reflections included in the refinement
0.0685
Goodness-of-fit parameter for all reflections included in the refinement